TITLE:
Long-Time Relaxation and Residual Conductivity in GaP Irradiated by High-Energy Electrons
AUTHORS:
Hrant Yeritsyan, Norik Grigoryan, Vachagan Harutyunyan, Eleonora Hakhverdyan, Valeriy Baghdasaryan
KEYWORDS:
Long-Time Relaxation (LR); Residual Conductivity (RC); Photoconductivity; Irradiation; Gallium Phosphide
JOURNAL NAME:
Journal of Modern Physics,
Vol.5 No.1,
January
22,
2014
ABSTRACT: This paper presents the results of a study of long-time
relaxation (LR) and residual conductivity in n-type gallium phosphide (GaP)
crystals irradiated by 50 MeV electrons. A manifold increase in
photosensitivity and quenching of residual conductivity was found
as a result of irradiation. It is shown that LR in GaP is due to disordered
regions (generated by electron irradiation) which have conductivity close to
self one. The Fermi level in the disordered regions is determined by which
is located deep in the forbidden band (Ее - 1.0 eV). LR
effect is mainly explained by a spatial separation of electrons and holes,
recombination of which is prevented by potential barriers. The observed
increase in conductivity is associated with the increase in the concentration
of minority carriers as well as with increase of the Hall mobility at the
sample illumination.