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A. I. Yakimov, A. V. Dvurechenskiï, A. I. Nikiforov, S. V. Chaïkovskiï and S. A. Tiïs, “Ge/Si Photodiodes with Embedded Arrays of Ge Quantum Dots for the near Infrared (1.3 - 1.5 μm) Region,” Semiconductors, Vol. 37, No. 11, 2003, pp. 1345-1349. http://dx.doi.org/10.1134/1.1626222

has been cited by the following article:

• TITLE: Modelling of the Quantum Transport in Strained Si/SiGe/Si Superlattices Based P-i-n Infrared Photodetectors for 1.3 - 1.55 μm Optical Communication

  AUTHORS: Noureddine Sfina, Naima Yahyaoui, Moncef Said, Jean-Louis Lazzari

  KEYWORDS: Strained SiGe/Si Quantum Wells; Band Structure; Device Engineering; P-i-n Infrared Photodetectors

  JOURNAL NAME: Modeling and Numerical Simulation of Material Science, Vol.4 No.1, January 17, 2014

  ABSTRACT: In this paper, a p-i-n heterojunction based on strain-compensated Si/Si1-xGex/Si multiple quantum wells on relaxed Si1-yGey is proposed for photodetection applications. The Si1-yGey/Si/Si1-xGex/Si/Si1-yGey stack consists in a W-like potential profile strain-compensated in the two low absorption windows of silica fibers infrared (IR) photodetectors. These computations have been used for the study of p-i-n infrared photodetectors operating at room temperature (RT) in the range 1.3 - 1.55 μm. The electron transport in the Si/Si1-xGex/Si multi-quantum wells-based p-i-n structure was analyzed and numerically simulated taking into account tunneling process and thermally activated transfer through the barriers mainly. These processes were modeled with a system of Schrodinger and kinetic equations self-consistently resolved with the Poisson equation. Temperature dependence of zero-bias resistance area product (RoA) and bias-dependent dynamic resistance of the diode have been analyzed in details to investigate the contribution of dark current mechanisms which reduce the electrical performances of the diode.