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X. Wang, Y. Ouyang, X. Li, H. Wang, J. Guo and H. Dai, “Room-Temperature All-Semiconducting Sub-10-nm Graphene Nanoribbon Field-Effect Transistors,” Physical Review Letters, Vol. 100, No. 20, 2008, Article ID: 206803. http://dx.doi.org/10.1103/PhysRevLett.100.206803

has been cited by the following article:

• TITLE: Electronic Properties of Nanopore Edges of Ferromagnetic Graphene Nanomeshes at High Carrier Densities under Ionic-Liquid Gating

  AUTHORS: Taijyu Hashimoto, Syota Kamikawa, Yuko Yagi, Junji Haruyama

  KEYWORDS: Graphene; Nanomesh; Edge; Spin Polarization; Magnetism; Ionic-Liquid Gate; High Electric Fields; Rare-Metal-Free Spintronics

  JOURNAL NAME: Materials Sciences and Applications, Vol.5 No.1, January 14, 2014

  ABSTRACT: Graphene edges with a zigzag-type atomic structure can theoretically produce spontaneous spin polarization despite being a critical-metal-free material. We have demonstrated this in graphene nanomeshes (GNMs) with honeycomb-like arrays of low-defect hexagonal nanopores by observing room-temperature ferromagnetism and spin-based phenomena arising from the zigzag-pore edges. Here, we apply extremely high electric fields to the ferromagnetic (FM) GNMs using an ionic-liquid gate. A large on/off-ratio for hole current is observed for even small applied ionic-liquid gate voltages (Vig). Observations of the magnetoresistance behavior reveal high carrier densities of ~1013 cm-2 at large Vig values. We find a maximum conductance peak in the high -Vig region and its separation into two peaks upon applying a side-gate (in-plane external) voltage (Vex). It is discussed that localized edge-π band with excess-density electrons induced by Vig and its spin splitting for majority and minority of spins by Vex (half-metallicity model) lead to these phenomena. The results must realize critical-element-free novel spintronic devices.