Article citationsMore>>

M. Bescond, J. L. Autran, D. Munteanu and M. Lannoo, “Atomic-Scale Modeling of Double Gate MOSFETs Using a Tight-Binding Greens Function Formalism,” SolidState Electronics, Vol. 48, 2004, pp. 567-574.
http://dx.doi.org/10.1016/j.sse.2003.09.025

has been cited by the following article:

• TITLE: Mixed-Mode Device Modeling of DGMOS RF Oscillators

  AUTHORS: Mourad Bella, Saida Latreche, Samir Labiod, Christian Gontrand

  KEYWORDS: DGMOS Transistor; Colpitts Oscillator; Radiofrequency; Mixed Mode Simulation; ISF Function; Noise

  JOURNAL NAME: Circuits and Systems, Vol.5 No.1, January 14, 2014

  ABSTRACT: A Colpitts oscillator, working around a 3 GHz frequency, contains a double gate Metal Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved, applying a quantum model to the device, whereas the rest of the considered circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of phase noise is based on the Impulse Sensitivity Function of the Colpitts Oscillator which describes carefully the sensitivity of an oscillator to any impulse current injection in any node of the circuit. Finally, we improve the phase noise modeling, confronting some analytical developments to mixed-mode simulations.