TITLE:
Mixed-Mode Device Modeling of DGMOS RF Oscillators
AUTHORS:
Mourad Bella, Saida Latreche, Samir Labiod, Christian Gontrand
KEYWORDS:
DGMOS Transistor; Colpitts Oscillator; Radiofrequency; Mixed Mode Simulation; ISF Function; Noise
JOURNAL NAME:
Circuits and Systems,
Vol.5 No.1,
January
14,
2014
ABSTRACT: A Colpitts
oscillator, working around a 3 GHz frequency, contains a double gate Metal
Oxide Semiconductor transistor (DGMOS). A mixed-mode analysis is involved,
applying a quantum model to the device, whereas the rest of the considered
circuit is governed by Kirchhoff’s laws. The Linear Time Variant (LTV) model of
phase noise is based on the Impulse Sensitivity Function of the Colpitts
Oscillator which describes carefully the sensitivity of an oscillator to any
impulse current injection in any node of the circuit. Finally, we improve the
phase noise modeling, confronting some analytical developments to mixed-mode
simulations.