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C. K. Birdsall, “Particle-In-Cell Charged-Particle Simulations, Plus Monte Carlo Collisions with Neutral Atoms, PIC-MCC,” IEEE Transactions on Plasma Science, Vol. 19, No. 2, 1991, pp. 65-85.
http://dx.doi.org/10.1109/27.106800

has been cited by the following article:

• TITLE: The Implementation of the Surface Charging Effects in Three-Dimensional Simulations of SiO2 Etching Profile Evolution

  AUTHORS: Branislav Radjenović, Marija Radmilović-Radjenović

  KEYWORDS: Plasma Etching; Level Set Method; Profile Charging; Finite Elements Method

  JOURNAL NAME: Engineering, Vol.6 No.1, January 10, 2014

  ABSTRACT: Refined control of etched profile in microelectronic devices during plasma etching process is one of the most important tasks of front-end and back-end microelectronic devices manufacturing technologies. A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all the points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving Laplace equation using finite elements method. Calculations were performed in the case of simplified model of Ar+/CF4 non-equilibrium plasma etching of SiO2.