Article citationsMore>>

R. Balachandran, B. H. Ong, H. Y. Wong, K. B. Tan and M. Muhamad Rasat, “Dielectric Characteristics of Barium Strontium Titanate Based Metal Insulator Metal Capacitor for Dynamic Random Access Memory Cell,” International Journal of Electrochemical Science, Vol. 7, 2012, pp. 11895-11903.

has been cited by the following article: