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S. A. Campbell, H. S. Kim, D. C. Gilmer, B. He, T. Ma and W. L. Gladfelter, “Titanium Dioxide (TiO2)-Based Gate Insulators,” IBM Journal of Research and Development, Vol. 43, No. 3, 1999, pp. 383-392.
http://dx.doi.org/10.1147/rd.433.0383

has been cited by the following article:

• TITLE: Plasma-Assisted Chemical Vapor Deposition of Titanium Oxide Layer at Room-Temperature

  AUTHORS: Satoshi Yamauchi, Hiromi Suzuki, Risa Akutsu

  KEYWORDS: PCVD; Amorphous Titanium-Oxide; FTIR; Hydroxyl; Hydrophilicity

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.4 No.1, January 8, 2014

  ABSTRACT: Plasma-assisted chemical vapor deposition (PCVD) at pressure as low as 3 mtorr using titanium-tetra-isopropoxide (TTIP) and oxygen mixed gas plasma generated by 13.56 MHz radio frequency power (RF-power) below 70 W were applied to deposit titanium-oxide layer at temperature under 40°C. Plasma optical emission spectroscopy and FTIR indicated that density of OH group in the amorphous layer was related to the density of OH or H2O in the plasma and the species was formed on electrode to induce the RF-power. Hydrophilicity on the layer was dependent on the density of chemisorbed OH, but was degraded by the excess OH. The PCVD-TiOx coating was demonstrated on polyethylene terephthalate and showed good hydrophilic property with the contact angle of water about 5°.