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M. Zhu and K. Varahramyan, “Performance Improvement of Organic Thin Film Transistors by SiO2/Pentacene Interface Modification Using an Electrostatically Assembled PDDA Monolayer,” Solid-State Electron, Vol. 50, No. 2, 2006, pp. 129-133.
http://dx.doi.org/10.1016/j.sse.2005.10.040

has been cited by the following article:

• TITLE: Remote-Plasma-Assisted Deposition of Pentacene Layer Using Atomic-Hydrogen

  AUTHORS: Satoshi Yamauchi, Takatoshi Minakuchi, Miyuki Onodera

  KEYWORDS: Remote-Plasma-Assisted Deposition; Pentacene; Hydrogen Plasma; Atomic Hydrogen

  JOURNAL NAME: Journal of Crystallization Process and Technology, Vol.4 No.1, January 2, 2014

  ABSTRACT: Pentacene thin layers were deposited on Si with the native oxide at 80°C by remote-plasma-assisted deposition (RPAD) using hydrogen-plasma cell to supply atomic hydrogen radicals. The deposition rate was increased by RPAD comparing to that by non-excited hydrogen gas supply whereas thermal evaporation rate of pentacene from crucible was same in the both process. DFM and XRD studies showed the grain laterally grew in the thin film phase with the size above 10 μm by RPAD. First-principles molecular orbital calculations suggested pentacene is evaporated from crucible as the trimer or larger cluster but atomic hydrogen penetrated into the cluster enhances cracking of pentacene clusters to the monomer.