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L. Chen, E. E. Carpenter, C. S. Hellberg, H. C. Dorn, M. Shultz, W. Wernsdorfer and I. Chiorescu, “Spin Transition in Gd3N@C80, Detected by Low-Temperature onchip SQUID Technique,” Journal of Applied Physics, Vol. 109, 2011, Article ID: 07B101.

has been cited by the following article:

• TITLE: Schottkey Barrier Measurement of Nanocrystalline Lu3N@C80/Au Contact

  AUTHORS: Yong Sun, Yusuke Hattori, Masamichi Sakaino, Fumio Morimoto, Kenta Kirimoto

  KEYWORDS: Lu3N@C80; Nanocrystalline; Schottky Barrier; Mobility

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.12, December 24, 2013

  ABSTRACT: Electrical and structural properties of nanocrystalline solids of C80 fullerene encapsulated with a Lu3N cluster, Lu3N@C80, have been studied by measuring x-ray photoemission spectra, x-ray diffraction, and current-voltage characteristics of the Lu3N@C80/Au Schottky contact in the temperature range of 300 - 500 K. The nanocrystalline solid sample of Lu3N@C80 fullerene consists of grains characterized with an fcc structure and those grains become larger in size after pressing the powder sample at 1.25 GPa. The current-voltage characteristics measured at various temperatures showed that there are no significant dependences on both the Schottky barrier and the carrier mobility on electric field. The Schottky barrier of the Lu3N@C80/Au contact is determined to be 0.71 ± 0.04 eV.