TITLE:
Schottkey Barrier Measurement of Nanocrystalline Lu3N@C80/Au Contact
AUTHORS:
Yong Sun, Yusuke Hattori, Masamichi Sakaino, Fumio Morimoto, Kenta Kirimoto
KEYWORDS:
Lu3N@C80; Nanocrystalline; Schottky Barrier; Mobility
JOURNAL NAME:
Materials Sciences and Applications,
Vol.4 No.12,
December
24,
2013
ABSTRACT: Electrical and structural properties of nanocrystalline solids of C80 fullerene encapsulated with a Lu3N cluster, Lu3N@C80, have been studied by measuring x-ray photoemission spectra, x-ray diffraction, and current-voltage characteristics of the Lu3N@C80/Au Schottky contact in the temperature range of 300 - 500 K. The nanocrystalline solid sample of Lu3N@C80 fullerene consists of grains characterized with an fcc structure and those grains become larger in size after pressing the powder sample at 1.25 GPa. The current-voltage characteristics measured at various temperatures showed that there are no significant dependences on both the Schottky barrier and the carrier mobility on electric field. The Schottky barrier of the Lu3N@C80/Au contact is determined to be 0.71 ± 0.04 eV.