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E. Liu, P. Xiao, J. S. Chen, B. C. Lim and L. Li, “Ni Doped ZnO Thin Films for Diluted Magnetic Semiconductor Materials,” Current Applied Physics, No. 3-4, May 2008, pp. 408-411. doi:10.1016/j.cap.2007.10.025

has been cited by the following article:

• TITLE: Modification at Lattice Scale for an Optimized Optical Response of Alx(ZnO)1-x Nanostructures

  AUTHORS: Avanish Kumar Srivastava, Karuppanan Senthil, Melepurath Deepa, Ruchi Gakhar, Jai Shankar Tawale

  KEYWORDS: Electron Microscopy, Nanostructures, ZnO, Photoluminescence

  JOURNAL NAME: World Journal of Nano Science and Engineering, Vol.1 No.1, March 24, 2011

  ABSTRACT: We report the systematic changes of nano-scaled features and optical properties in a promising transparent oxide material, namely, Alx (x = 0, 1, 2 and 5%) doped ZnO1-x (AZO). Electron microscopy investigations revealed the alterations at lattice scale depending on the presence of Al-content in ZnO nanostructures. Lattice spacings of 0.26 and 0.28 nm oriented along the (0002) and (10 0) planes, respectively, were attributed to euhedral-and facetted-structures of hexagonal-ZnO. The AZO samples were further characterized by XRD, SEM, UV-vis spectrophotometry, Raman spectroscopy and photoluminescence studies. It has been shown that at a dopant concentration of 2%Al in ZnO, an optimal balance could be achieved between microstructure and optical properties.