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Y. Ida, S. Watase, T. Shinagawa, M. Watanabe, M. Chigane, M. Inaba, A. Tasaka and M. Izaki, “Direct Electrodeposition of 1.46 eV Bandgap Silver(I) Oxide Semiconductor Films by Electrogenerated Acid,” Chemistry of Materials, Vol. 20, No. 4, 2008, pp.1254-1256. http://dx.doi.org/10.1021/cm702865r

has been cited by the following article:

• TITLE: Optical Studies of Ag2O Thin Film Prepared by Electron Beam Evaporation Method

  AUTHORS: Gandhimathinathan Saroja, Veerapandy Vasu, Nagayasamy Nagarani

  KEYWORDS: Silver Oxide; Thin Film; Extinction Coefficient

  JOURNAL NAME: Open Journal of Metal, Vol.3 No.4, December 13, 2013

  ABSTRACT: Silver oxide (Ag2O) thin films were deposited on glass substrates using electron beam gun evaporation techniques without oxygen atmosphere. The deposited films were post annealed at 100°C, 150°C, and 200°C, respectively. The surface morphologies, structural and optical properties at different annealing temperatures were studied using scanning electron microscopy (SEM), X-ray diffraction (XRD), and ultra-violet-visible spectroscopy. The XRD results show that the intensity of (200) plane intensified as the annealing temperature increased from 100°C to 200°C. The XRD spectra reveal that the films are polycrystalline, having cubic structure irrespective of post annealing temperatures. The optical band gap of Ag2O thin films decreases from 1.716 eV to 1.559 eV as the annealing temperature increases from 100°C to 200°C.