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C.-H. Lin, B.-C. Hsu, M. H. Lee and C. W. Liu, “A Comprehensive Study of Inversion Current in MOS Tunneling Diodes,” IEEE Transactions on Electron Devices, Vol. 48, No. 9, 2001, pp. 2125-2130.
http://dx.doi.org/10.1109/16.944205

has been cited by the following article:

• TITLE: Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

  AUTHORS: Ayşe Evrim Saatci, Orhan Özdemir, Kubilay Kutlu

  KEYWORDS: Excess Capacitance; MOS; Selfly Inverted Region; Tunneling Based Inversion Currents

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.12, December 6, 2013

  ABSTRACT: Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).