Article citationsMore>>

H. Matsuura, T. Okuno, H. Okushi and K. Tanaka, “Electrical Properties of n-Amorphous/p-Crystalline Silicon Heterojunctions,” Journal of Applied Physics, Vol. 55, No. 4, 1984, pp. 1012-1019.
http://dx.doi.org/10.1063/1.333193

has been cited by the following article:

• TITLE: Conduction Mechanism Analysis of Inversion Current in MOS Tunnel Diodes

  AUTHORS: Ayşe Evrim Saatci, Orhan Özdemir, Kubilay Kutlu

  KEYWORDS: Excess Capacitance; MOS; Selfly Inverted Region; Tunneling Based Inversion Currents

  JOURNAL NAME: Materials Sciences and Applications, Vol.4 No.12, December 6, 2013

  ABSTRACT: Self inversion issue and excess capacitance phenomenon were observed for the first time in relatively thick silicon dioxide (SiO2) in the form of MOS (metal(Al)/SiO2/p type crystalline silicon) structure. Both phenomena were based on minority carriers (electrons in this case) and studied through DC current-applied bias voltage (I-V) and AC admittance measurements in dark/light condition as a function of ambient temperature (295 - 380 K). Either of the cases was the departure of traditional MOS analysis, manifesting themselves in the inversion regime of MOS diode. Increase in frequency/temperature/light intensity within dark and light conditions led to weaken the maxima of hump in C-V curves and finally turned into deep depletion mode after exceeding threshold value of frequency/temperature/light intensity. In resumed conditions, supplementary I-V measurements were carried out to describe the generation and conduction mechanism(s) for minority carriers (electrons).