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K. C. Liu, W. H. Tzeng, K. M. Chang, et al. “The Resistive Switching Characteristics of a Ti/Gd2O3/Pt RRAM Device,” Microelectronics Reliability, Vol. 50, No. 5, 2010, pp. 670-673.
http://dx.doi.org/10.1016/j.microrel.2010.02.006

has been cited by the following article:

• TITLE: Dynamics and Synchronization of Memristor-Based Fractional-Order System

  AUTHORS: Hongmin Deng, Qionghua Wang

  KEYWORDS: Memristor; Fractional Order; Simulation; Synchronization

  JOURNAL NAME: International Journal of Modern Nonlinear Theory and Application, Vol.2 No.4, December 2, 2013

  ABSTRACT: A memristor-based fractional order circuit derived from Chua’s topology is presented. The dynamic properties of this circuit such as phase trajectories, time evolution characteristics of state variables are analyzed through the approximation method of fractional order operator. In addition, it clearly describes the relationships between the impedance variation of the memristor and the varying mobility of the doped region of the memristor in different circuit parameters. Finally, a periodic memristor-based system driven by another chaotic memristor-based fractional order system is synchronized to chaotic state via the linear error feedback technique.