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N. Ma, B. Shen, F. J. Xu, L. W. Lu, Z. H. Feng, Z. G. Zhang, S. B. Dun, C. P. Wen, J. Y. Wang, F. Lin, D. T. Zhang and M. Sun, “Current-Controlled Negative Differential Resistance Effect Induced by Gunn-Type Instability in n-Type GaN Epilayers,” Applied Physical Letters, Vol. 96, 2010, Article ID: 242104. http://dx.doi.org/10.1063/1.3455070

has been cited by the following article:

• TITLE: THz Oscillations in a GaN Based Planar Nano-Device

  AUTHORS: K. Y. Xu, Y. N. Wang, Z. N. Wang, J. W. Xiong, G. Wang

  KEYWORDS: THz Oscillation; Gunn; Monte Carlo; GaN; Planar Nanodevice

  JOURNAL NAME: Journal of Computer and Communications, Vol.1 No.7, November 29, 2013

  ABSTRACT: Gunn oscillations in a GaN based planar nano-device have been studied by ensemble Monte Carlo (EMC) method. Simulation results show that when the channel length of the device reduces to 450 nm, THz oscillations (about 0.3 THz) can be obtained. Also the phase of the oscillations can be controlled by the initial conditions that excite the Gunn domains. Moreover, through adjusting the phase difference between the oscillations in a double-channels device, which attained by parallel connecting two single-channel devices, the frequency of the device shifts from 0.3 THz to 0.6 THz. This phenomenon remains in devices with shorter channel-length, unless the channel-length is too short to support Gunn oscillations. The possible underlying mechanisms are also discussed.