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X. Z. Ma, J. Huo, Y. Qu and S. L. Du, “8 Temperature Characteristics of 808 nm Semiconductor Lasers,” Infrared and Laser Engineering, Vol. 12, 2010, pp. 1306-1309.

has been cited by the following article:

• TITLE: The Study of Relaxation Time in Test of 940 nm Semiconductor Laser

  AUTHORS: Jiachun Li, Jianjun Li, Tao Liu, Bifeng Cui, Jun Deng, Jun Han, Linjie He, Shengjie Lin

  KEYWORDS: Semiconductor Laser; Test; Temperature Characteristics; Relaxation Time

  JOURNAL NAME: Journal of Computer and Communications, Vol.1 No.7, November 29, 2013

  ABSTRACT: Conventional test of the peak wavelength of a laser used to be applied immediately after a device is injected current. However, the results can not be considered as an accurate description to temperature characteristic. This passage puts forward a concept of relaxation time in wavelength texts, mainly based on the experiment of 940 nm strain quantum well laser, confirming that under constant current, wavelength will get through a process of rising, and then, reach the limit. This process brings the effect on spectral characteristics of a device which cannot be ignored and the accumulated heat in relaxation time will gradually impact the emission wavelength of the laser, even crest split to form bimodal phenomenon.