Y. W. Zhao, Z. Y. Dong, M. L. Duan and W. R. Sun, European Physical Journal Applied Physics, Vol. 27, 2004, pp. 167-169. http://dx.doi.org/10.1051/epjap:2004096
has been cited by the following article:
TITLE: The Conductivity of Indium Phosphide Irradiated by Fast Electrons
AUTHORS: Sh. Sh. Rashidova
KEYWORDS: Antistructural Defects; Activation Energy; Indium Phosphide; Radiothermoluminescence Method
JOURNAL NAME: Journal of Modern Physics, Vol.4 No.11, November 27, 2013
ABSTRACT: In this work, studied electrical conductivity(s) and annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.