TITLE:
The Conductivity of Indium Phosphide Irradiated by Fast Electrons
AUTHORS:
Sh. Sh. Rashidova
KEYWORDS:
Antistructural Defects; Activation Energy; Indium Phosphide; Radiothermoluminescence Method
JOURNAL NAME:
Journal of Modern Physics,
Vol.4 No.11,
November
27,
2013
ABSTRACT: In this work, studied electrical conductivity(s) and
annealing of radiation defects in crystals of n-InP are irradiated by electrons energy of 6 MeV
and doses of 1017 el/cm2 (centimeter) and 2 × 1017 el/cm2 (centimeter). It is shown that alongside point defects (in the form of
complexes with impurity atoms in crystals of n-InP) also form the complex defects of the type of disordered areas, annealing of which proceeds at T > 300°C that binds accumulating radiation defects.