Article citationsMore>>

P. Chevalier, F. Pourchon, T. Lacave, G. Avenier, Y. Campidelli, L. Depoyan, G. Troillard, M. Buczko, D. Gloria, D. Céli, C. Gaquiere and A. Chantre, “A Conventional Double-Polysilicon FSA-SEG Si/SiGe:C HBT Reaching 400 GHz fMAX,” IEEE Bipolar/BiCMOS Circuits and Technology Meeting, Capri, 12-14 October 2009, pp. 1-4.

has been cited by the following article:

SCIRP Newsletter
Copyright © 2006-2026 Scientific Research Publishing Inc. All Rights Reserved.
Top