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V. Veliadis, M. Snook, T. McNutt, H. Hearne, P. Potyraj, A. Lelis and C. Scozzie, “A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) Normally On 4H-SiC JFET With 6.8-mm2 Active Area and locking-Voltage Capability Reaching the Material Limit,” IEEE Electronics Device Letters, Vol. 29, No. 12, 2008, pp. 1325-1327.

has been cited by the following article:

• TITLE: Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

  AUTHORS: Gang Chen, Song Bai, Yonghong Tao, Yun Li

  KEYWORDS: 4H-SiC; VJFET; Ohmic; Trench; Implant

  JOURNAL NAME: Energy and Power Engineering, Vol.5 No.4B, November 18, 2013

  ABSTRACT: A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.