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K. Rueschenschmidt, T. M. reu, R. Rupp, et al., “SiC JFET: Currently the Best Solution for a Unipolar SiC High Power Switch,” Material Science Forum, Vol. 600-603, 2009, pp. 901-906. doi:10.4028/www.scientific.net/MSF.600-603.901

has been cited by the following article:

• TITLE: Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

  AUTHORS: Gang Chen, Song Bai, Yonghong Tao, Yun Li

  KEYWORDS: 4H-SiC; VJFET; Ohmic; Trench; Implant

  JOURNAL NAME: Energy and Power Engineering, Vol.5 No.4B, November 18, 2013

  ABSTRACT: A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.