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M. S. Mazzola, L. Cheng, J. R. B. Casady, D. Seale, V. Bondarenko, R. Kelley and J. B. Casady, presented in The 6th International All Electric Combat Vehicle (AECV) Conference 2005, Bath, England, June 15, 2005,

has been cited by the following article:

• TITLE: Progress of High Voltage Trenched and Implanted 4H-SiC Vertical JFET

  AUTHORS: Gang Chen, Song Bai, Yonghong Tao, Yun Li

  KEYWORDS: 4H-SiC; VJFET; Ohmic; Trench; Implant

  JOURNAL NAME: Energy and Power Engineering, Vol.5 No.4B, November 18, 2013

  ABSTRACT: A silicon carbide (SiC) vertical channel junction field effect transistor (VJFET) was fabricated based on in-house SiC epitaxial wafer with trenched and implanted method. Its forward drain current is in excess of 3.12 A (170 W/cm2) with a current gain of ID/IG = 19746 at gate bias VG = 3 V and drain bias VD = 5.5 V. The SiC VJFET device’s related specific on-resistance 54 mΩ·cm2. The BV gain is 250 V with Vg from -10 V to -4 V and is 350 V with Vg from -4 V to -2 V. Self-aligned floating guard rings provide edge termination that blocks 3180V at a gate bias of ?14 V and a drain-current density of 1.53 mA/cm2.