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Advances in Materials Physics and Chemistry

Advances in Materials Physics and Chemistry

Advances in Materials Physics and Chemistry

ISSN Print: 2162-531X
ISSN Online: 2162-5328
www.scirp.net/journal/ampc
E-mail: [email protected]
"Ab Initio Carrier Transport Dynamics and Defect Engineering in Doped 3C-SiC for Power Electronics"
written by Winston Ndeda Agesa, Waswa Michael Nakitare, Munyole Stella, Stanley C. Tsimbasi,
published by Advances in Materials Physics and Chemistry, Vol.16 No.8, 2026
has been cited by the following article(s):
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