has been cited by the following article(s):
|
[1]
|
Impact of Interfacial SiO2 Layer Thickness on the Electrical Performance of SiO2/High-K Stacks on 4H-SiC
Materials Science Forum,
2025
DOI:10.4028/p-MxQp6y
|
|
|
|
|
[2]
|
Four Decades of E-Model Development for Time-Dependent Dielectric Breakdown (TDDB)
IEEE Electron Devices Reviews,
2025
DOI:10.1109/EDR.2025.3620381
|
|
|
|
|
[3]
|
Van der Waals Epitaxially Grown Molecular Crystal Dielectric Sb2O3 for 2D Electronics
ACS Nano,
2024
DOI:10.1021/acsnano.4c01883
|
|
|
|
|
[4]
|
Magnetic-assisted alignment of nanofibers in a polymer nanocomposite for high-temperature capacitive energy storage applications
Materials Horizons,
2024
DOI:10.1039/D4MH00493K
|
|
|
|
|
[5]
|
Physical model for the frequency dependence of time-dependent dielectric breakdown (TDDB)
AIP Advances,
2023
DOI:10.1063/5.0150268
|
|
|
|
|
[6]
|
Modified Dynamic Physical Model of Valence Change Mechanism Memristors
ACS Applied Materials & Interfaces,
2022
DOI:10.1021/acsami.2c10944
|
|
|
|
|
[7]
|
Dielectric breakdown of 2D muscovite mica
Scientific Reports,
2022
DOI:10.1038/s41598-022-18320-7
|
|
|
|
|
[8]
|
Dielectric Breakdown in Single-Crystal Hexagonal Boron Nitride
ACS Applied Electronic Materials,
2021
DOI:10.1021/acsaelm.1c00469
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