High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode

ISSN Print: 2161-4954
ISSN Online: 2161-4962
www.scirp.net/journal/wjnse
E-mail: [email protected]

Citations

"High Efficiency SiC Terahertz Source in Mixed Tunnelling Avalanche Transit Time Mode"
written by Pranati Panda, Satya Narayana Padhi, Gana Nath Dash,
published by World Journal of Nano Science and Engineering, Vol.4 No.4, 2014

has been cited by the following article(s):

[1]	Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+ nn− n+ 4H–SiC impact avalanche transit time diodes
	Applied Physics A, 2016

[2]	Prospects of gallium nitride double drift region mixed tunneling avalanche transit time diodes for operation in F, Y and THz bands
	Journal of Semiconductors, 2016

[3]	Effect of temperature on avalanche region width and DC to RF conversion efficiency of the p+nn−n+ 4H–SiC impact avalanche transit time diodes
	Applied Physics A, 2016

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