World Journal of Nano Science and Engineering

World Journal of Nano Science and Engineering

ISSN Print: 2161-4954
ISSN Online: 2161-4962
www.scirp.net/journal/wjnse
E-mail: [email protected]
"New Model for Drain and Gate Current of Single-Electron Transistor at High Temperature"
written by Amine Touati, Samir Chatbouri, Nabil Sghaier, Adel Kalboussi,
published by World Journal of Nano Science and Engineering, Vol.2 No.4, 2012
has been cited by the following article(s):
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[3] Room-temperature high sensitivity of multiple tunnel junctions based on single-charge photodetection
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[5] Analysis and simulation of Single Electron Transistor as an analogue frequency doubler
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[6] Design and analysis of low power 8-bit ALU on reversible logic for nanoprocessors
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[7] Power gain mechanism and methods for power gain improvement of quantum and conventional transistors
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[8] Theoretical Analysis and Characterization of Multi-Islands Single-Electron Devices with Applications
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[9] Multigate Single Electron Transistor Operation at Room Temperature and its Performance in Hybrid CMOS-SET Architecture
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[10] Performance of Multigate Single Electron Transistor in Wide Temperature Range and 22 nm Hybrid Technology
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[11] Power gain improvement for single-electron transistors
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[12] Research Article Theoretical Analysis and Characterization of Multi-Islands Single-Electron Devices with Applications
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