Materials Sciences and Applications

Materials Sciences and Applications

ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.net/journal/msa
E-mail: [email protected]
"Effect of Temperature Dependence on Electrical Characterization of p-n GaN Diode Fabricated by RF Magnetron Sputtering"
written by Thi Tran Anh Tuan, Dong-Hau Kuo, Cheng-Che Li, Guan-Zhang Li,
published by Materials Sciences and Applications, Vol.6 No.9, 2015
has been cited by the following article(s):
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[3] Fully Sputtered n–AlInGaN/p–Mg-InxGa1− xN (x≤ 0.1) Heterojunction Diodes: Electrical Properties Over a Wide Temperature Range
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[8] Electrical and Photo-Electrical Characteristics of a GaInNAs basedp-in Diode with 10-undoped Quantum Wells
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[9] Electrical Characterization of RF Reactive Sputtered without p–Mg-In Using x
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[10] Electrical Characterization of RF Reactive Sputtered p–Mg-InxGa1− xN/n–Si Hetero-Junction Diodes without Using Buffer Layer
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[11] Fabrication, photoresponse and temperature dependence of n-VO2/n-MoSe2 heterojunction diode
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[12] Electrical and Structural Properties of All-Sputtered Al/SiO2/p-GaN MOS Schottky Diode
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[13] An examination of correlation between characteristic and device performance of ZnO films as a function of La content
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[14] On Manufacturing of a Differential Amplifier. An Approach of Optimization to Increase of Density of Elements
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[15] An Approach to Optimize Manufacturing of a Multistage Inverter to Increase Density of Field-Effect Heterotransistors
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[16] Lantanyum (La) katkılı çinko oksit (ZnO) filmlerin büyütülmesi ve karakteristiklerinin incelenmesi
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[17] ON DECREASING OF DIMENSIONS OF FIELD-EFFECT TRANSISTORS WITH SEVERAL SOURCES
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