Antiferroelectricity in ZrO<sub>2</sub> and Ferroelectricity in Zr, Al, La Doped HfO<sub>2</sub> Nanoparticles

ISSN Print: 2162-531X
ISSN Online: 2162-5328
www.scirp.net/journal/ampc
E-mail: [email protected]

Citations

"Antiferroelectricity in ZrO₂ and Ferroelectricity in Zr, Al, La Doped HfO₂ Nanoparticles"
written by A. T. Apostolov, I. N. Apostolova, J. M. Wesselinowa,
published by Advances in Materials Physics and Chemistry, Vol.10 No.2, 2020

has been cited by the following article(s):

[1]	Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering
	2020

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[2]	Optimizing Reliability: Suppressing Wake-Up Effects in Morphotropic Phase Boundary-Engineered HfxZr1–xO2 Ferroelectrics ACS Applied Electronic Materials, 2025 DOI:10.1021/acsaelm.5c00687

[3]	Excellent Reliability and High-Speed Antiferroelectric HfZrO2 Tunnel Junction by a High-Pressure Annealing Process and Built-In Bias Engineering ACS Applied Materials & Interfaces, 2020 DOI:10.1021/acsami.0c15091