Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application

ISSN Print: 1947-3931
ISSN Online: 1947-394X
www.scirp.net/journal/eng
E-mail: [email protected]

Citations

"Designing a Carbon Nanotube Field-Effect Transistor with High Transition Frequency for Ultra-Wideband Application"
written by Ramin Nouri-Bayat, Ali Reza Kashani-Nia,
published by Engineering, Vol.9 No.1, 2017

has been cited by the following article(s):

[1]	Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors
	2021

[2]	Noise and Charge Discreteness as Ultimate Limit for the THz Operation of Ultra-Small Electronic Devices
	2018

[1]	Innovative Superlattice Patterns in MOSFET Channel for Improved Subthreshold Swing Performance Arabian Journal for Science and Engineering, 2026 DOI:10.1007/s13369-025-11041-9

[2]	Ant Lion Optimizer for Suppression of Ambipolar Conduction in Schottky Barrier Carbon Nanotube Field Effect Transistors Silicon, 2022 DOI:10.1007/s12633-021-01353-4

[3]	Noise and charge discreteness as ultimate limit for the THz operation of ultra-small electronic devices Scientific Reports, 2020 DOI:10.1038/s41598-020-72982-9

[4]	Noise and Charge Discreteness as Ultimate Limit for the THz Operation of Ultra-Small Electronic Devices 2018 Spanish Conference on Electron Devices (CDE), 2018 DOI:10.1109/CDE.2018.8597135