has been cited by the following article(s):
|
[1]
|
Design and performance analysis of tri-layered strained Si/Si1−xGex/Si heterostructure DG feedback FET
|
|
Physica Scripta,
2024 |
|
|
|
|
[2]
|
Improvement of Drive Currents of FinFET using Strained Si Technology
|
|
Journal of The Institution of Engineers (India): Series B,
2022 |
|
|
|
|
[3]
|
Development of Tri‐Layered s‐Si/s‐SiGe/s‐Si Channel Heterostructure‐on‐Insulator MOSFET for Enhanced Drive Current
|
|
2018 |
|
|
|
|
[4]
|
INVESTIGATION OF CARRIER MOBILITY DEGRADATION EFFECTS ON MOSFET LEAKAGE SIMULATIONS
|
|
2016 |
|
|
|
|
[5]
|
Lipid layers as ultra-thin dielectric for highly sensitive ions field effect transistor sensors
|
|
Thesis,
2016 |
|
|
|
|
[6]
|
Development of a simulator for analyzing some performance parameters of nanoscale strained silicon MOSFET-based CMOS inverters
|
|
Microelectronics Journal,
2016 |
|
|
|
|
[7]
|
Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs
|
|
Journal of Semiconductors? ,
2014 |
|
|
|
|
[8]
|
Analysis of Nanoscale Strained-Si/SiGe MOSFETs including Source/Drain Series Resistance through a Multi-iterative Technique
|
|
VLSI Design and 2014 13th International Conference on Embedded Systems, 2014 27th International Conference on. IEEE, 2014.,
2014 |
|
|
|
|
[9]
|
Analytical modeling of subthreshold current and subthreshold swing of Gaussiandoped strained-Si-on-insulator MOSFETs
|
|
半导体学报: 英文版,
2014 |
|
|
|
|
[10]
|
Poly-Si_ (1-x) Ge_x 栅应变 SiN 型金属-氧化物-半导体场效应管栅耗尽模型研究
|
|
物理学报,
2012 |
|
|
|
|
[11]
|
Poly-Si1-χGeχ 栅应变SiN 型金属-氧化物-半导体场效应管栅耗尽模型研究水
|
|
物理学报,
2012 |
|
|
|
|
[12]
|
Poly-Si1-χGeχ 栅应变 SiN 型金属-氧化物-半导体场效应管栅耗尽模型研究水
|
|
2012 |
|
|
|
|
[13]
|
Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate
|
|
2012 |
|
|
|
|
[14]
|
Poly-Si1-xGex 栅应变 SiN 型金属-氧化物-半导体场效应管栅耗尽模型研究
|
|
2012 |
|
|
|
|
[1]
|
Design and performance analysis of tri-layered strained Si/Si1–x
Ge
x
/Si heterostructure DG feedback FET
Physica Scripta,
2024
DOI:10.1088/1402-4896/ad2e62
|
|
|
|
|
[2]
|
Improvement of Drive Currents of FinFET using Strained Si Technology
Journal of The Institution of Engineers (India): Series B,
2022
DOI:10.1007/s40031-021-00641-2
|
|
|
|
|
[3]
|
Analytical modeling of subthreshold current and subthreshold swing of Gaussian-doped strained-Si-on-insulator MOSFETs
Journal of Semiconductors,
2014
DOI:10.1088/1674-4926/35/8/084001
|
|
|
|
|
[4]
|
Analytical models of subthreshold current and swing of short-channel strained-Si (s-Si) on Silicon–Germanium-on-Insulator (SGOI) MOSFETs
Superlattices and Microstructures,
2013
DOI:10.1016/j.spmi.2013.02.012
|
|
|
|
|
[5]
|
Study of gate depletion effect in strained Si NMOSFET with polycrystalline silicon germanium gate
Acta Physica Sinica,
2012
DOI:10.7498/aps.61.107301
|
|
|
|