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[1]
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Numerical study of optical absorption coefficients in Manning-like AlGaAs/GaAs double quantum wells: Effects of doped impurities
Physica E: Low-dimensional Systems and Nanostructures,
2023
DOI:10.1016/j.physe.2022.115623
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[2]
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Binding energy, electronic states, and optical absorption in a staircase-like spherical quantum dot with hydrogenic impurity
The European Physical Journal Plus,
2023
DOI:10.1140/epjp/s13360-023-04044-8
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[3]
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Effects of magnetic, electric, and intense laser fields on the optical properties of AlGaAs/GaAs quantum wells for terahertz photodetectors
Physica B: Condensed Matter,
2022
DOI:10.1016/j.physb.2022.413838
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[4]
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Theoretical simulation of optical absorption coefficients in heterostructure based on semi-parabolic-double quantum wells
The European Physical Journal Plus,
2022
DOI:10.1140/epjp/s13360-022-02742-3
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[5]
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Raman and RBS Analysis of Silicon Ion Implanted Gallium Arsenide
International Journal of Nanoscience,
2022
DOI:10.1142/S0219581X22500028
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[6]
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Theoretical investigation of linear and nonlinear optical properties in an heterostructure based on triple parabolic barriers: Effects of external fields
Physica B: Condensed Matter,
2021
DOI:10.1016/j.physb.2020.412782
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[7]
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Nonlinear optical properties of a quantum well with inversely quadratic Hellman potential
The European Physical Journal B,
2021
DOI:10.1140/epjb/s10051-021-00129-4
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[8]
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Numerical simulation of linear and nonlinear optical properties in heterostructure based on triple Gaussian quantum wells: effects of applied external fields and structural parameters
The European Physical Journal Plus,
2021
DOI:10.1140/epjp/s13360-021-01907-w
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[9]
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Theoretical study of electronic properties of resonant tunneling diodes based on double and triple AlGaAs barriers
Results in Physics,
2020
DOI:10.1016/j.rinp.2020.103089
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[10]
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Hydrostatic Pressure and Temperature Effect on the Electron-Related Optical Responses in Symmetric and Asymmetric n-Type Double Delta-Doped GaAs Quantum Well Under Terahertz Laser Field
Journal of Electronic Materials,
2019
DOI:10.1007/s11664-019-07102-z
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[11]
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Effects of silicon negative ion implantation in semi-insulating gallium arsenide
Radiation Effects and Defects in Solids,
2019
DOI:10.1080/10420150.2019.1632851
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[12]
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Intersubband Absorption in Gallium Arsenide Implanted with Silicon Negative Ions
International Journal of Nanoscience,
2019
DOI:10.1142/S0219581X19500194
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