Study of Timing Characteristics of NOT Gate Transistor Level Circuit Implemented Using Nano-MOSFET by Analyzing Sub-Band Potential Energy Profile and Current-Voltage Characteristic of Quasi-Ballistic Transport

ISSN Print: 2161-4954
ISSN Online: 2161-4962
www.scirp.net/journal/wjnse
E-mail: [email protected]

Citations

has been cited by the following article(s):

[1]	Numerical Analysis Study of The Effects of Backscattering Coefficient on Electrical Performance of Double-Gate nano-MOSFET
	Platform: A Journal of Science and Technology, 2023

[2]	Comparative Analysis of the Drain Current in a 7nm and 14nm Fully Depleted Silicon-On-Insulator
	SLU Journal of Science …, 2022

[3]	Effect of Temperature on the Quasi Ballistic Transport of a Double Gate NanoMOSFET
	Journal of Science …, 2021

[4]	DEVICE AND CIRCUIT LEVEL SIMULATION STUDY OF NOR GATE LOGIC FAMILIES DESIGNED USING NANO-MOSFETs
	2021

[5]	Effect of Temperature on the Quasi Ballistic Transport of a Double Gate Nano-MOSFET
	2021

[6]	A flexibility and accuracy comparison study of different current-voltage equations for double-gate nano-MOSFET by simulation and theory
	Applications of Modelling and Simulation, 2021

[7]	Investigation of the Thermal Effect in Nano Silicon on Insulator (SOI) MOSFET
	NIPES Journal of …, 2021

[8]	Comparative Analysis of the Drain Current in a 7nm and 14nm Fully Depleted Silicon-On-Insulator (SOI) MOSFET