"
Chemical Sensitivity of Luminescent Epitaxial Surface InP Quantum Dots"
written by Roberta De Angelis, Mauro Casalboni, Ivan Colantoni, Liliana D’Amico, Fabio De Matteis, Fariba Hatami, William T. Masselink, Paolo Prosposito,
published by
Journal of Sensor Technology,
Vol.3 No.1, 2013
has been cited by the following article(s):
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[1]
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External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot
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Journal of Applied Mathematics and Physics,
2021 |
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[2]
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Colloidal InSe nanostructures: Effect of morphology on their chemical sensitivity to methanol and formaldehyde fumes
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Sensors and Actuators B: Chemical,
2016 |
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[3]
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Chemical sensitivity of InP/In0. 48Ga0. 52P surface quantum dots studied by time-resolved photoluminescence spectroscopy
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Journal of Luminescence,
2015 |
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[4]
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Chemical sensitivity of InP/In 0.48 Ga 0.52 P surface quantum dots studied by time-resolved photoluminescence spectroscopy
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Journal of Luminescence,
2015 |
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[5]
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Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules
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Journal of Applied Physics,
2015 |
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[6]
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Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results
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Nanotechnology,
2014 |
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[7]
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Realistic models of quantum-dot heterostructures
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Numerical Simulation of Optoelectronic Devices (NUSOD), 2014 14th International Conference on. IEEE,
2014 |
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[8]
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Vapour Sensitivity of InP Surface Quantum Dots
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2014 |
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[9]
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Luminescence chemical sensitivity of Surface InP quantum dots Roberta De Angelis, Mauro Casalboni, Ivan Colantoni, Liliana D’Amico, Fabio De Matteis, Fariba Hatami, b William T. Masselink b and Paolo Prosposito
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IX INSTM CONFERENCE, Bari,
2013 |
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[1]
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Colloidal InSe nanostructures: Effect of morphology on their chemical sensitivity to methanol and formaldehyde fumes
Sensors and Actuators B: Chemical,
2016
DOI:10.1016/j.snb.2016.05.150
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[2]
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Measurement of Elastic Constants by Simultaneously Sensing Longitudinal and Shear Waves as an Overlapped Signal
Journal of the Korean Society for Nondestructive Testing,
2016
DOI:10.7779/JKSNT.2016.36.2.138
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[3]
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Inter-dot strain field effect on the optoelectronic properties of realistic InP lateral quantum-dot molecules
Journal of Applied Physics,
2015
DOI:10.1063/1.4914041
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[4]
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Chemical sensitivity of InP/In0.48Ga0.52P surface quantum dots studied by time-resolved photoluminescence spectroscopy
Journal of Luminescence,
2015
DOI:10.1016/j.jlumin.2015.07.029
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[5]
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Realistic models of quantum-dot heterostructures
Numerical Simulation of Optoelectronic Devices, 2014,
2014
DOI:10.1109/NUSOD.2014.6935327
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[6]
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Vapour Sensitivity of InP Surface Quantum Dots
Key Engineering Materials,
2014
DOI:10.4028/www.scientific.net/KEM.605.177
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[7]
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Model of a realistic InP surface quantum dot extrapolated from atomic force microscopy results
Nanotechnology,
2014
DOI:10.1088/0957-4484/25/19/195201
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