Structural Design of an Electrically Erasable EEPROM Memory Cell

ISSN Print: 2331-4222
ISSN Online: 2331-4249
www.scirp.net/journal/wjet
E-mail: [email protected]

Citations

"Structural Design of an Electrically Erasable EEPROM Memory Cell"
written by Lei Zhao,
published by World Journal of Engineering and Technology, Vol.8 No.2, 2020

has been cited by the following article(s):

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[2]	VI-characteristics and transient analysis of an EEPROM device 2023 7th International Conference on Trends in Electronics and Informatics (ICOEI), 2023 DOI:10.1109/ICOEI56765.2023.10125983

[3]	EEPROM endurance degradation at different temperatures: State of the art TCAD simulation Microelectronics Reliability, 2022 DOI:10.1016/j.microrel.2022.114717

[4]	An Overview on Nonvolatile Memories Used in Automotive Industry 2021 International Conference on Electromechanical and Energy Systems (SIELMEN), 2021 DOI:10.1109/SIELMEN53755.2021.9600442