Design of a Low Power Low-Noise Amplifier with Improved Gain/Noise Ratio

ISSN Print: 2331-4222
ISSN Online: 2331-4249
www.scirp.net/journal/wjet
E-mail: [email protected]

Citations

"Design of a Low Power Low-Noise Amplifier with Improved Gain/Noise Ratio"
written by Raja Mahmou, Khalid Faitah,
published by World Journal of Engineering and Technology, Vol.12 No.1, 2024

has been cited by the following article(s):

No relevant information.

[1]	Exploring the Potential of MgZnO/ZnO High Electron Mobility Transistors in High-Frequency and Low-Noise Applications Semiconductors, 2026 DOI:10.1134/S1063782625603620

[2]	High-speed pHEMT-based low noise amplifier for 2.4-GHz wireless communication Journal of Electronic Science and Technology, 2025 DOI:10.1016/j.jnlest.2025.100338