Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field

Journal of Applied Mathematics and Physics

Journal of Applied Mathematics and Physics

Journal of Applied Mathematics and Physics

ISSN Print: 2327-4352
ISSN Online: 2327-4379
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"Features of Recombination Radiation of GaAs Type Semiconductors with the Participation of Fine Acceptor Levels in a Magnetic Field"
written by Nosirjon Khaydarovich Yuldashev, Iftixorjon Isaqovich Yulchiev, Bozorboy Joboraliyevich Akhmadaliev, Khusanboy Manopovich Sulaymonov,
published by Journal of Applied Mathematics and Physics, Vol.12 No.7, 2024

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