Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures

ISSN Print: 2327-6045
ISSN Online: 2327-6053
www.scirp.net/journal/msce
E-mail: [email protected]

Citations

"Investigation of Carrier Conduction Mechanism over InAs/InP Quantum Dashes and InAs/GaAs Quantum Dots Based p-i-n Laser Heterostructures"
written by Neslihan Ayarcı Kuruoğlu, Orhan Özdemir, Kutsal Bozkurt,
published by Journal of Materials Science and Chemical Engineering, Vol.5 No.9, 2017

has been cited by the following article(s):

[1]	External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot
	Journal of Applied Mathematics and Physics, 2021

[1]	Simultaneous derivation of carrier mobility through admittance spectroscopy on MBE grown GaAs/Al x Ga1−x as based solar cell device Semiconductor Science and Technology, 2026 DOI:10.1088/1361-6641/ae9214

[2]	External Parameters Affecting on the Photoluminescence of InAs Spherical Layer Quantum Dot Journal of Applied Mathematics and Physics, 2021 DOI:10.4236/jamp.2021.910155