Schottky Barriers on Layered Anisotropic Semiconductor – WSe<sub>2</sub>

ISSN Print: 2153-117X
ISSN Online: 2153-1188
www.scirp.net/journal/msa
E-mail: [email protected]

Citations

"Schottky Barriers on Layered Anisotropic Semiconductor – WSe₂ – with 1000 Å Indium Metal Thickness"
written by Achamma John Mathai, Chalappally Kesav Sumesh, Bharat Purushotamds Modi,
published by Materials Sciences and Applications, Vol.2 No.8, 2011

has been cited by the following article(s):

[1]	High-performance multilayer WSe2 p-type field effect transistors with Pd contacts for circuit applications
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[2]	WSe 2 场效应晶体管的源漏接触特性研究
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[3]	WSe2场效应晶体管的源漏接触特性研究
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[4]	Role of metal contacts and effect of annealing in high performance 2D WSe2 field-effect transistors
	2020

[5]	Quantum Multibody Interactions in Halide-Assisted Vapor-Synthesized Monolayer WSe2 and Its Integration in a High Responsivity Photodetector with Low-Interface …
	2019

[6]	Electrical properties of metal/wse2structures
	2017

[7]	Electrical Characterization of Interface States in In/p-Si Schottky Diode From I–V Characteristics
	Physics of Semiconductor Devices. Springer International Publishing, 2014

[8]	Electrical Characterization of Interface States in In/p-Si Schottky Diode From IV Characteristics
	Physics of Semiconductor Devices: 17th International Workshop on the Physics of Semiconductor Devices 2013, 2013

[9]	Effect of tunneling current on the reverse IV characteristics of In, Al-pWSe2 Schottky diodes
	The European Physical Journal Applied Physics, 2012

[1]	2020 DOI:10.12794/metadc1752376

[2]	Quantum Multibody Interactions in Halide-Assisted Vapor-Synthesized Monolayer WSe2 and Its Integration in a High Responsivity Photodetector with Low-Interface Trap Density Chemistry of Materials, 2019 DOI:10.1021/acs.chemmater.9b04086

[3]	Physics of Semiconductor Devices Environmental Science and Engineering, 2014 DOI:10.1007/978-3-319-03002-9_20