"
In-Situ Study of Non-Equilibrium Charge Carriers’ Behavior under Ultra-Short Pulsed Electrons Irradiation in Silicon Crystal"
written by Hrant N. Yeritsyan, Aram A. Sahakyan, Norair E. Grigoryan, Vachagan V. Harutyunyan, Vika V. Arzumanyan, Vasili M. Tsakanov, Bagrat A. Grigoryan, Gayane A. Amatuni,
published by
Journal of Modern Physics,
Vol.10 No.9, 2019
has been cited by the following article(s):
|
[1]
|
A New Method of Industrial Passivation for Characterization of Surface Defects in Silicon‐Based Materials or Solar Cell Precursors
physica status solidi (RRL) – Rapid Research Letters,
2025
DOI:10.1002/pssr.202400411
|
|
|
|
|
[2]
|
Space low earth orbit environment simulator for ground testing materials and devices
Acta Astronautica,
2021
DOI:10.1016/j.actaastro.2021.01.030
|
|
|
|