Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.net/journal/jmp
E-mail: [email protected]

Citations

"Back Surface Recombination Velocity Modeling in White Biased Silicon Solar Cell under Steady State"
written by Ousmane Diasse, Amadou Diao, Mamadou Wade, Marcel Sitor Diouf, Ibrahima Diatta, Richard Mane, Youssou Traore, Gregoire Sissoko,
published by Journal of Modern Physics, Vol.9 No.2, 2018

has been cited by the following article(s):

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[6]	Influence of the Magnetic Field on the Transient Decay of the Density of Charge Carriers in a Silicon Photocell with Vertical Multijunctions Connected in Series Placed in Open Circuit Energy and Power Engineering, 2022 DOI:10.4236/epe.2022.1412041

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