The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.net/journal/jmp
E-mail: [email protected]

Citations

"The Use of Phase Portraits for the Study of the Generation-Recombination Processes in Semiconductor"
written by Gafur Gulyamov, A. G. Gulyamov, A. Q. Ergashev, B. T. Abdulazizov,
published by Journal of Modern Physics, Vol.6 No.13, 2015

has been cited by the following article(s):

[1]	Investigation of the Strain–Stress Field in Nanoscale Multilayer Systems by the Phase Plane Method
	Materials, 2024

[2]	Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films
	2016

[1]	Investigation of the Strain–Stress Field in Nanoscale Multilayer Systems by the Phase Plane Method Materials, 2024 DOI:10.3390/ma17102466

[2]	Effect of Heating of Charge Carriers and Phonons on The Contact Resistance of Rectifying Metal-Semiconductor Structures East European Journal of Physics, 2024 DOI:10.26565/2312-4334-2024-3-42

[3]	Influence of Recombination Centers on the Phase Portraits in Nanosized Semiconductor Films Journal of Modern Physics, 2016 DOI:10.4236/jmp.2016.713151