Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells

Journal of Modern Physics

ISSN Print: 2153-1196
ISSN Online: 2153-120X
www.scirp.net/journal/jmp
E-mail: [email protected]

Citations

Journals Menu

Aims & Scope
Articles
Archive
Editorial Board
Publication Fees
Indexing

"Quantum Conductance Staircase of Edge Hole Channels in Silicon Quantum Wells"
written by Nikolay T. Bagraev, Leonid E. Klyachkin, Andrei A. Kudryavtsev, Anna M. Malyarenko,
published by Journal of Modern Physics, Vol.3 No.11, 2012

has been cited by the following article(s):

Google Scholar
CrossRef

[1]	Terahertz emission from silicon carbide nanostructures
	Semiconductors, 2023

[2]	Терагерцовое излучение из наноструктур карбида кремния
	Физика и техника …, 2021

[3]	КВАНТОВАННАЯ ДРОБНАЯ ПРОВОДИМОСТЬ КРАЕВЫХ КАНАЛОВ КРЕМНИЕВЫХ НАНОСАНДВИЧЕЙ
	2015

	[email protected]
	+86 18163351462(WhatsApp)
	1655362766

	Paper Publishing WeChat

Journal of Modern Physics

Journal of Modern Physics

Journals Menu

Guidelines & Policies

Home

About SCIRP

Service

Policies

[1]	Terahertz Emission from Silicon Carbide Nanostructures Semiconductors, 2023 DOI:10.1134/S106378262309004X