• Study on the Critic Ablation Property of 2D Carbon Reinforced Silicon Carbide (C/SiC) Laminated Composites via CVI Process ()
  Changwan Min, Li Jing, Bin Fu, Geliang Sun, Zhanwei Cao
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51011  1,715 Downloads   2,846 Views   Citations
  This article belongs to the Special Issue on

• Preparation Process and Optimization Design for Composites Rudderpost in the Long-Time High Temperature Environment ()
  Li Jing, Changwan Min, Geliang Sun, Bin Fu, Min Chen, Zhanwei Cao
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51010  3,172 Downloads   4,140 Views   Citations
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• The Strength Characters of C/C Composite Material with Opening Hole and Typical Application ()
  Zhiyong Tan, Changwan Min, Xuyun Zhan, Weili Dong
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51009  1,809 Downloads   3,018 Views   Citations
  This article belongs to the Special Issue on

• Optimizing a Single-Absorption-Layer Thin-Film Solar Cell1 Model to Achieve 31% Efficiency ()
  Joseph E. O’Connor, Sherif Michael
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51008  3,797 Downloads   5,156 Views   Citations
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• Mg Tilted-Angle Ion Implantation for Threshold Voltage Control and Suppression of the Short Channel Effect in GaN MISFETs ()
  Hayao Kasai, Takuya Oikawa, Tomoyoshi Mishima, Tohru Nakamura
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51007  3,421 Downloads   4,728 Views   Citations
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• Reduction of Dislocation Densities of Ge Layers Grown on Si Substrates by Using Microwave Plasma Heating and Fabrication of High Hole Mobility MOSFETs on Ge Layers ()
  Hiroki Nakaie, Tetsuji Arai, Chiaya Yamamoto, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51006  3,327 Downloads   4,405 Views   Citations
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• Ohmic Contact Formation for n+4H-SiC Substrate by Selective Heating Method Using Hydrogen Radical Irradiation ()
  Tetsuji Arai, Kazuki Kamimura, Chiaya Yamamoto, Mai Shirakura, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Toshiyuki Takamatsu, Masaaki Ogino, Masaaki Tachioka, Haruo Nakazawa
  Journal of Materials Science and Chemical Engineering Vol.5 No.1,  January 4, 2017
  DOI: 10.4236/msce.2017.51005  3,578 Downloads   5,226 Views   Citations
  This article belongs to the Special Issue on