Dr. Hédi Fitouri

University of Monastir, Tunisia

Assistant Professor

Email: [email protected]

Qualifications

2009 Ph.D., Physical and Natural Sciences of Tunis, Materials Science

Publications(selected)

1. Zaied I, Alghurabi A M, Fitouri H, et al. Structural and optical properties of diluted GaAsBi alloys grown on GaAs (115) substrate by MOVPE[J]. Materials Science in Semiconductor Processing, 2025, 195: 109649.

2. Zouaghi S, Abdelwahed A B, Fitouri H, et al. Influence of annealing on the thermal quenching of photoluminescence in GaAsBi/GaAs quantum dots with bimodal inhomogeneous broadening[J]. Micro and Nanostructures, 2025, 198: 208039.
3. Abdelwahed A B, Zouaghi S, Fitouri H, et al. MOVPE growth and characterization of GaAs/GaAsBi/GaAs pin structure[J]. Optical Materials, 2024, 155: 115822.
4. Alazmi B O, Althebyani H H H, Zaied I, et al. Thermal annealing effects on the physical properties of GaAsBi/GaAs/GaAs: Si structure[J]. Journal of Umm Al-Qura University for Applied Sciences, 2023, 9(2): 164-175.
5. Zouaghi S, Fitouri H, Habchi M M, et al. Influence of the Substrate Material on the Structure and Morphological Properties of Bi Films[J]. Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques, 2022, 16(5): 783-788.
6. Zouaghi S, Fitouri H, Rebey A. Thermal processes contributions to the temperature dependence of the energy gap in dilute bismuth III-V alloys[J]. Solid State Communications, 2022, 343: 114649.
7. Guizani I, Fitouri H, Zaied I, et al. A systematic methodology for the analysis of multicomponent photoreflectance spectra applied to GaAsBi/GaAs structure[J]. Physics of the Solid State, 2020, 62(6): 1060-1066.
8. Boussaha R, Fitouri H, Rebey A. In situ monitoring of InAsBi alloy grown under alternated bismuth flows by metalorganic vapor phase epitaxy[J]. Materials Science and Engineering: B, 2019, 241: 22-26.
9. Boussaha R, Mzoughi T, Fitouri H, et al. Temperature dependence on the morphological evolution of dilute InAsBi/GaAs nanostructures grown by metalorganic vapor phase epitaxy[J]. Surface Review and Letters, 2017, 24(08): 1750105.
10. Boussaha R, Fitouri H, Rebey A, et al. MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance[J]. Journal of Materials Science: Materials in Electronics, 2017, 28(12): 8708-8716.
11. Fitouri H, Habchi M M, Rebey A. High‐resolution X‐ray diffraction of III–V semiconductor thin films[M]//X-ray Scattering. IntechOpen, 2017.

Profile Details

https://scholar.google.com/citations?user=nLfUlDEAAAAJ&hl=fr

https://www.researchgate.net/profile/Hedi-Fitouri-2

WoS Researcher ID: CQB-5092-2022