Biography

Dr. Hailong Zhou

University of California at Los Angeles, USA

Postdoctoral Researcher


Email: [email protected], [email protected]


Qualifications

2003-2007 Ph.D., National University of Singapore,Physics Department

1999-2002 M.S., Shandong University,Crystal Materials

1995-1999 B.S., Shandong University, Physics


Publications (selected)

  1. Qiao F, Zhou H, Fu Q, et al. Method for etching high aspect ratio structures: U.S. Patent 12,463,053[P]. 2025-11-4.
  2. Sun S, Zhang S, Wu B, et al. Highly efficient photonic convolver via lossless mode-division fan-in[J]. Nature Communications, 2025, 16(1): 7513.
  3. Huang Y, Zhou H. Memory device with staircase free structure and methods for forming the same: U.S. Patent Application 18/730,681[P]. 2025-5-29.
  4. Zhou H, Iljo K, Joubert O P, et al. In-situ carbon liner for high aspect ratio features: U.S. Patent Application 17/949,083[P]. 2024-3-21.
  5. Zhou H, Kang S, Takeshita K, et al. Method of enhancing etching selectivity using a pulsed plasma: U.S. Patent 11,495,470[P]. 2022-11-8.
  6. Fung N, Lee G, Zhou H, et al. Method of etching hardmasks containing high hardness materials: U.S. Patent 10,867,795[P]. 2020-12-15.
  7. Zhou H, Yangchung L E E, Lee C, et al. Method of enhanced selectivity of hard mask using plasma treatments: U.S. Patent 10,497,567[P]. 2019-12-3.
  8. Zhou H, Lee G, Patil A, et al. Methods for high temperature etching a material layer using protection coating: U.S. Patent 10,497,578[P]. 2019-12-3.
  9. Zhou H, Lee G, Yang L. Highly selective etching methods for etching dielectric materials: U.S. Patent 9,595,451[P]. 2017-3-14.
  10. Liu Y, Zhang G, Zhou H, et al. Ambipolar barristors for reconfigurable logic circuits[J]. Nano Letters, 2017, 17(3): 1448-1454.
  11. Yu W J, Vu Q A, Oh H, et al. Unusually efficient photocurrent extraction in monolayer van der Waals heterostructure by tunnelling through discretized barriers[J]. Nature communications, 2016, 7(1): 13278.
  12. Liu Y, Zhou H, Weiss N O, et al. High-performance organic vertical thin film transistor using graphene as a tunable contact[J]. ACS nano, 2015, 9(11): 11102-11108.


Profile Details

https://scholar.google.com/citations?user=FyG91ZMAAAAJ&hl=en

https://www.researchgate.net/profile/Hailong-Zhou-2

WoS Researcher ID: D-9814-2012

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