Dr. Aidong Shen

The City College of the City University of New York, USA

Professor

Email: [email protected]

Qualifications

1992  Ph.D., Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Applied Physics

Publications (Selected)

1. Han Y, Gao R, Wang Y, et al. Self-powered p/Ga2O3/GaN p–i–n ultraviolet photodetector with a composite material made of polypyrrole (PPy) and nitrogen-doped graphene (PGr) as the P-region[J]. Applied Physics Reviews, 2026, 13(2).

2. Song Y, Wu Z, Cui W, et al. Two-zone temperature AlN buffer layer-assisted growth of high-quality AlN films with controllable step bunching morphology on Si (111) substrates[J]. Journal of Alloys and Compounds, 2026, 1059: 187240.
3. Gao C, Wang Y, Song Y, et al. Solar-blind deep UV photodetector based on β-Ga2O3/AlN/p-Si nBp tunneling photodiode for extreme temperature applications[J]. Materials Today, 2026, 93: 103220.
4. Yin B, Fu S, Cui W, et al. Surface passivation enhanced β-Ga2O3-based solar-blind photodetector via introducing an Al2O3 ultrathin layer[J]. Journal of Applied Physics, 2025, 138(21).
5. Fu S, Xia D, Wang Y, et al. Plasma modification induced interface engineering enhanced GaN UV photodetectors with ultrahigh performance and bias-tuned selective response[J]. Materials Today Physics, 2025: 101831.
6. Han Y, Wang Y, Gao C, et al. High-performance UV photodetector based on β-Ga2O3/GaN heterojunction prepared by a new route of reverse substitution growth[J]. Journal of Materials Science & Technology, 2025, 225: 141-150.
7. Fu R, Jiang X, Wang Y, et al. A high responsivity UV-visible dual band photodetector based on SnO2 microwires with RhB surface sensitization[J]. Journal of Alloys and Compounds, 2024, 978: 173533.
8. Gao C, Wang Y, Fu S, et al. Solar blind avalanche photodetector based on a n-β-Ga2O3/n-Si heterojunction via an introduction of AlN buffer layer for interface lattice and band engineering[J]. Materials Today Physics, 2024, 45: 101474.
9. Qi K, Fu S, Wang Y, et al. High-detectivity solar-blind deep UV photodetectors based on cubic/monoclinic mixed-phase (InxGa1− x) 2O3 thin films[J]. Journal of Alloys and Compounds, 2023, 965: 171473.
10. Gao C, Wang Y, Fu S, et al. High-performance solar-blind ultraviolet photodetectors based on β-Ga2O3 thin films grown on p-Si (111) substrates with improved material quality via an AlN buffer layer introduced by metal–organic chemical vapor deposition[J]. ACS Applied Materials & Interfaces, 2023, 15(32): 38612-38622.
11. Wang Y, Fu R, Wang Y, et al. A High Responsivity Self-Powered Solar-Blind DUV Photodetector Based on a Nitrogen-Doped Graphene/β-Ga₂O₃ Microwire p–n Heterojunction[J]. IEEE Electron Device Letters, 2022, 43(7): 1073-1076.
12. Fu R, Li L, Li X, et al. Photogenerated carrier separation and localized surface plasmon resonance in SnS2@ AuNPs Janus heterostructures for enhanced visible light catalysis[J]. Materials Chemistry and Physics, 2021, 267: 124702. Hernandez-Mainet L, Chen G, Zangiabadi A, et al. Growth and characterization of II-VI semiconductor multilayer quantum-well structures for two-color quantum well infrared photodetector applications[J]. Journal of Vacuum Science & Technology A, 2021, 39(3).

Profile Details

https://scholar.google.com/citations?user=tNjOCt8AAAAJ&hl=en

https://www.researchgate.net/profile/Aidong-Shen

WoS Researcher ID: GCC-5946-2022