Prof. Harry E. Ruda

Edward S. Rogers Sr. Department of Electrical and Computer Engineering

Centre for Advanced Nanotechnology, Department of Materials Science and Engineering

University of Toronto, Canada

Professor

Email: [email protected]

Qualifications

1983–1984 Postdoc., Massachusetts Institute of Technology (MIT) and IBM Yorktown Heights, Semiconductor Physics

1979–1982 Ph.D., Massachusetts Institute of Technology (MIT), Semiconductor Materials and Solid State Physics

1976–1979 B.Sc., Imperial College of Science and Technology, London University, Materials Physics

Publications (selected)

1. Austin, A. J., Su, L. X., Saveliev, I., et al. (2026). Electrostatic tuning of charge transfer mechanisms for enhanced gas detection with nanowire FETs. ACS Sensors, 11(6), 4589–4599.
2. Jose, A., Al-Turk, S., Ruda, H. E., et al. (2024). Comparing the mean inner potential of Zn-VI semiconductor nanowires using off-axis electron holography. Semiconductor Science and Technology, 39(7), Article 075004.
3. Tseng, A. C., Ito, K., Lynall, D., et al. (2021). Ion sensitivity from current hysteresis in InAs nanowire field-effect transistors functionalized with ionophore-doped fluorosilicone membranes. Sensors and Actuators B: Chemical, 336, Article 129704.
4. Chen, A. Q., Nair, S. V., Miljkovic, B., et al. (2020). Electronic structure of bulk and two-dimensional SrTiO3: DFT calculation with GGA plus U methods. Journal of Nanoparticle Research, 22(9), Article 259.
5. Byrne, K., Shik, A., Wisniewski, D., et al. (2020). Rethinking the characterization of nanoscale field-effect transistors: A universal approach. Small, 16(22), Article 1907321.
6. Lynall, D., Tseng, A. C., Nair, S. V., et al. (2020). Nonlinear chemical sensitivity enhancement of nanowires in the ultralow concentration regime. ACS Nano, 14(1), 964–973.
7. Wisniewski, D., Byrne, K., Fernandes, C., et al. (2019). Fingerprinting electronic structure in nanomaterials: A methodology illustrated by ZnSe nanowires. Nano Letters, 19(4), 2259–2266.
8. Wisniewski, D., Byrne, K., de Souza, C. F., et al. (2019). Enhancement of transport properties in single ZnSe nanowire field-effect transistors. Nanotechnology, 30(5), Article 054007.
9. Lynall, D., Nair, S. V., Gutstein, D., et al. (2018). Surface state dynamics dictating transport in InAs nanowires. Nano Letters, 18(2), 1387–1395.
10. Gutstein, D., Lynall, D., Nair, S. V., et al. (2018). Mapping the Coulomb environment in interference-quenched ballistic nanowires. Nano Letters, 18(1), 124–129.
11. Tseng, A. C., Lynall, D., Savelyev, I., et al. (2017). Sensing responses based on transfer characteristics of InAs nanowire field-effect transistors. Sensors, 17(7), Article 1640.
12. Alagha, S., Shik, A., Ruda, H. E., et al. (2017). Space-charge-limited current in nanowires. Journal of Applied Physics, 121(17), Article 174301.
13. Lynall, D., Byrne, K., Shik, A., et al. (2016). Surface properties from transconductance in nanoscale systems. Nano Letters, 16(10), 6028–6035.
14. Nawaz, M. A., Asghar, M., Shahid, M. Y., et al. (2016). Microstructural study of as grown and 650 °C annealed ZnO nanorods: X-ray peak profile analysis. Digest Journal of Nanomaterials and Biostructures, 11(2), 537–546.
15. Mallampati, B., Singh, A., Shik, A., et al. (2015). Electro-physical characterization of individual and arrays of ZnO nanowires. Journal of Applied Physics, 118(3), Article 034302.
16. Mallampati, B., Nair, S. V., Ruda, H. E., et al. (2015). Role of surface in high photoconductive gain measured in ZnO nanowire-based photodetector. Journal of Nanoparticle Research, 17(4), Article 176.

https://mse.utoronto.ca/faculty-staff/professors/ruda/
https://sites.utoronto.ca/emg
https://www.researchgate.net/profile/Harry-Ruda

WOS ResearcherID: G-5696-2017