Advanced Module Engineering

GlobalFoundries, USA

Principal Engineer

E-mail: [email protected]

Qualifications

2007 Ph.D., The Ohio State University (OSU)

2001 M.S., Korea Advanced Institute of Science and Technology (KAIST)

1999 B.S., Korea University

Publications (Selected)

1. Seo, J., Othman, A., Kim, H. J., Devabhaktuni, J., Trivedi, R., Penigalapati, D., ... & Babu, S. V. (2021). Storage temperature effects on the slurry health parameters and SiO2 removal rates during chemical mechanical polishing. ECS Journal of Solid State Science and Technology, 10(10), 104002.
2. Kim, H. J., Lawyer, A., Egan, B., Ng, M., Huang, C. C., & Han, J. H. (2018). Study on the mechanism of Nano-Flake defect during tungsten contact chemical mechanical polishing. ECS Journal of Solid State Science and Technology, 7(4), P175.
3. Kim, H. J., Egan, B., Shi, X., & Han, J. H. (2018). A new approach to the formation mechanism of tungsten void defect in chemical mechanical polishing. ECS Journal of Solid State Science and Technology, 7(11), P693.
4. Han, J., Shi, X., Wu, C., Koli, D., & Kim, H. J. (2017). Effect of reactive ion etch on the polishing selectivity during silicon nitride chemical mechanical polishing for sub-10 nm logic device. ECS Journal of Solid State Science and Technology, 6(4), P101.
5. Koli, D. R., Liang, R. W. H., Kim, H. J., & Solan, R. (2016). Advanced process control for variability control in chemical mechanical polishing process. ECS Transactions, 72(18), 11.
6. Kim, H. J., Lee, T. H., & Ryan, A. (2016). Material Removal Behavior of Nano-sized Cerium Hydroxide Abrasive Slurry for Chemical Mechanical Polishing. ECS Transactions, 72(18), 27.
7. Qin, L., Gu, S., Kim, H. J., Han, J. H., & Koli, D. R. (2016). Study on the polishing performance of silicon carbonitride (SiCN). ECS Transactions, 72(18), 73.
8. Kim, H. J., Govindarajulu, V., Bohra, G., Wang, H. M., & Koli, D. (2016). Metal flake defect and its formation mechanism during replacement metal gate CMP process. ECS Journal of Solid State Science and Technology, 5(10), P637.
9. Koli, D. R., Liang, R. W. H., Kim, H. J., & Solan, R. (2016). Advanced process control for variability control in chemical mechanical polishing process. ECS Transactions, 72(18), 11.
10. Qin, L., Gu, S., Kim, H. J., Han, J. H., & Koli, D. R. (2016, April). Initial Study on the Polishing Performance of Nitrogen-Doped Silicon Carbide (SiC). In Electrochemical Society Meeting Abstracts 229 (No. 17, pp. 1056-1056). The Electrochemical Society, Inc..
11. Kim, H. J., Lee, T. H., & Ryan, A. (2016). Material Removal Behavior of Nano-sized Cerium Hydroxide Abrasive Slurry for Chemical Mechanical Polishing. ECS Transactions, 72(18), 27.
12. Kim, H. J. (2015). Effect of brush treatment and brush contact sequence on cross contaminated defects during CMP in-situ cleaning. Tribology and Lubricants, 31(6), 239-244.

Profile Details

https://www.semiconchina.org/en/831

https://www.researchgate.net/profile/Hong-Jin-Kim